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CMOS Static RAM 16K (4K x 4-Bit)
Features
High-speed (equal access and cycle time) - Military: 25/45ns (max.) - Industrial: 25ns (max.) - Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation--2V data retention voltage (IDT6168LA only) Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Bidirectional data input and output Military product compliant to MIL-STD-883, Class B
IDT6168SA IDT6168LA
x
x x
x
x
x
x x
Description
The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Functional Block Diagram
A0 VCC GND ADDRESS DECODER A11 16,384-BIT MEMORY ARRAY
I/O0 I/O1 I/O2 I/O3
I/O CONTROL INPUT DATA CONTROL
,
CS WE
3090 drw 01
FEBRUARY 2001
1
(c)2000 Integrated Device Technology, Inc. DSC-3090/05
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Pin Configurations
A0 A1 A2 A3 A4 A5 A6 A7 CS GND
1 2 3 4 5 6 7 8 9 10 20 19 18
Truth Table(1)
Mode CS H L L WE X H L Output High-Z DOUT DIN Power Standby Active Active
3090 tbl 03
VCC A11 A10 A9 A8 I/O3 I/O2 I/O1 I/O0 WE
3090 drw 02
Standby Read Write
P20-1 D20-1 L20-1
17 16 15 14 13 12 11
NOTE: 1. H = VIH, L = VIL, X = Don't Care
Absolute Maximum Ratings(1)
Symbol Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Com'l. -0.5 to +7.0 Mil. -0.5 to +7.0 Unit V
,
VTERM
DIP/LCC Top View
TA TBIAS TSTG PT
0 to +70 -55 to +125 -55 to +125 1.0 50
-55 to +125 -65 to +135 -65 to +150 1.0 50
o
C C C
o
o
W mA
3090 tbl 04
Pin Descriptions
Name A0 - A11 CS WE I/O0 - I/O3 VCC GND Description Address Inputs Chip Select Write Enable Data Input/Output Power Ground
3090 tbl 01
IOUT
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
Symbol VCC GND Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0
____
Max. 5.5 0 6.0 0.8
Unit V V V V
3090 tbl 05
Capacitance (TA = +25C, f = 1.0MHz)
Symbol CIN CI/O Parameter(1) Input Capacitance I/O Capacitance Conditions VIN = 0V VOUT = 0V Max. 7 7 Unit pF pF
3090 tbl 02
VIH VIL
____
NOTE: 1. VIL (min.) = -3.0V for pulse width less than 20ns, once per cycle.
NOTE: 1. This parameter is determined by device characterization, but is not production tested.
Recommended Operating Temperature and Supply Voltage
Grade Military Industrial Commercial Temperature -55 C to +125 C -45OC to +85OC 0OC to +70OC
O O
GND 0V 0V 0V
Vcc 5V 10% 5V 10% 5V 10%
3090 tbl 06
2
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
DC Electrical Characteristics(1)
(VCC = 5.0V 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6168SA15 Power Symbol ICC1 Parameter Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., f = 0(2) Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., f = fMAX(2) Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX(2) Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN < VLC or VIN > VHC, f = 0(2) SA LA SA LA SA LA SA LA 110
____ ____
6168SA20 6168LA20 Com'l. 90 70 120 100 45 30 20 0.5 Mil.
____
6168SA25 6168LA25 Com'l. & Ind. 90 70 110 90 35 25 3 0.5 Mil. 100 80 120 100 45 30 10 0.3
6168SA45 6168LA45 Com'l.
____
Com'l.
Mil.
Mil. Unit 100 80 110 80 35 25 10 0.3
3090 tbl 07
mA
____
____
____
ICC2
145
____
____
____
____
mA
____
____
____
ISB
55
____
____
____
____
mA
____
____
____
ISB1
20
____
____
____
____
mA
____
____
____
NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.
DC Electrical Characteristics
VCC = 5.0V 10%
Symbol |ILI| |ILO| VOL IDT6168SA Parameter Input Leakage Current Output Leakage Current Output LOW Voltage Test Conditions VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC IOL = 10mA, VCC = Min. IOL = 8mA, VCC = Min. VOH Output HIGH Voltage IOH = -4mA, VCC = Min. MIL. COM'L. MIL. COM'L. Min.
____ ____
IDT6168LA Min.
____ ____
Max. 10 2 10 2 0.5 0.4
____
Max. 5 2 5 2 0.5 0.4
____
Unit A A V
____ ____
____ ____
____
____
____
____
2.4
2.4
V
3090 tbl 09
6.42 3
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Data Retention Characteristics
VLC = 0.2V, VHC = VCC 0.2V
Symbol VDR ICCDR Parameter VCC for Data Retention Data Retention Current
(LA Version Only)
IDT6168LA Test Condition Min. 2.0 MIL.
____ ____
Typ.(1)
____
Max.
____
Unit V A A ns ns
3090 tbl 10
CS > VHC VIN > VHC or < VLC tCDR(5) tR(5) Chip Deselect to Data Retention Time Operation Recovery Time
0.5(2) 1.0(3) 0.5(2) 1.0(3)
____
100(2) 150(3) 20(2) 30(3)
____
COM'L.
____ ____
0 tRC(4)
____
____
NOTES: 1. TA = +25C. 2. at VCC = 2V 3. at VCC = 3V 4. tRC = Read Cycle Time. 5. This parameter is guaranteed by device characterization, but is not production tested.
Low VCC Data Retention Waveform
VCC tCDR CS VIH 4.5V
DATA RETENTION MODE 4.5V VDR 2V VDR VIH
3090 drw 03
tR
,
AC Test Conditions
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3.0V 5ns 1.5V 1.5V See Figures 1 and 2
3090 tbl 11
5V 480 DATAOUT 255 30pF*
DATA OUT 255
5V 480
5pF*
3090 drw 04
3090 drw 05
Figure 1. AC Test Load *Includes scope and jig capacitances
Figure 2. AC Test Load (for tCHZ, tCLZ, tWHZ and tOW)
4
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
AC Electrical Characteristics
(VCC = 5.0V 10%, All Temperature Ranges)
6168SA15(1) Min. Max. 6168SA20(1) 6168LA20(1) Min. Max. 6168SA25 6168LA25 Min. Max. 6168SA45(2) 6168LA45(2) Min. Max. Unit
Symbol
Parameter
Read Cycle
tRC tAA tACS tCLZ(3) tCHZ(3) tOH tPU(3) tPD(3) Read Cycle Time Address Access Time Chip Select Access Time Chip Select to Output in Low-Z Chip Desele ct to Output in High-Z Output Hold from Address Change Chip Sele ct to Power Up Time Chip Deselect to Power Down Time 15
____ ____
20
____
____
25
____
____
45
____
____
ns ns ns ns ns ns ns ns
3090 tbl 12
15 15
____
20 20
____
25 25
____
45 45
____
____
____
____
____
3
____
5
____
5
____
5
____
8
____
10
____
10
____
25
____
3 0
____
3 0
____
3 0
____
3 0
____
____
____
____
____
35
20
25
40
NOTES: 1. 0 to +70C temperature range only. 2. -55C to +125C temperature range only. 3. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.
Timing Waveform of Read Cycle No. 1(1, 2)
tRC
ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID
3090 drw 06
,
Timing Waveform of Read Cycle No. 2(1, 3)
tRC CS tACS tCHZ (3) DATAOUT VALID
HIGH IMPEDANCE
tCLZ (4) DATAOUT
HIGH IMPEDANCE tPU
tPD
VCC
SUPPLY CURRENT
ICC ISB
3090 drw 07
,
NOTES: 1. WE is HIGH for Read cycle. 2. CS is LOW for Read cycle. 3. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. Transition is measured 200mV from steady state.
6.42 5
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
AC Electrical Characteristics (VCC = 5.0V 10%, All Temperature Ranges)
6168SA15(1) Symbol Parameter Min. Max. 6168SA20(1) 6168LA20(1) Min. Max. 6168SA25 6168LA25 Min. Max. 6168SA45(2) 6168LA45(2) Min. Max. Unit
Write Cycle
tWC tCW tAW tAS tWP tWR tDW tDH tWHZ(3) tOW(3) Write Cycle Time Chip Select to End-of-Write Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Valid to End-of-Write Data Hold Time Write Enable to Output in High-Z Output Active from End-of-Write 15 15 15 0 15 0 9 0
____ ____ ____
20 20 20 0 20 0 10 0
____
____ ____
20 20 20 0 20 0 10 0
____
____ ____
40 40 40 0 40 0 20 3
____
____ ____
ns ns ns ns ns ns ns ns ns ns
3090 tbl 13
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
____ ____
6
____
7
____
7
____
20
____
0
0
0
0
NOTES: 1. 0 to +70C temperature range only. 2. -55C to +125C temperature range only. 3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
6
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5)
tWC ADDRESS t AW CS t AS WE t WHZ DATAOUT
(6)
tWP
tWR
(3)
tOW
(4)
(6)
tCHZ DATA (4) VALID
(6)
PREVIOUS DATA VALID
t DW DATAIN
t DH
,
DATA VALID
3090 drw 08
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,5)
t WC ADDRESS t AW CS tAS WE t DW DATAIN DATA VALID
3090 drw 09
t CW
tWR
(3)
t DH
,
NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and input signals should not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state. 6. Transition is measured 200mV from steady state.
6.42 7
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Ordering Information -- Commercial & Industrial
IDT 6168 Device Type XX Power XXX Speed XX Package X Process/ Temperature Range Blank I Commercial (0C to +70C) Industrial (-45C to +85C)
P
300mil Plastic DIP (P20-1) (Commercial & Industrial only)
15* 20 25
Commercial Only Commercial Only Commercial &Industrial
Speed in nanoseconds
SA LA
Standard Power Low Power
3090 drw 10
*Standard power only.
Ordering Information -- Military
IDT 6168 Device Type XX Power XXX Speed XX Package X Process/ Temperature Range
B
Military (-55C to +125C) Compliant to MIL-STD-883, Class B
D L
300mil Ceramic DIP (D20-1) 20-pin Leadless Chip Carrier (L20-1)
25 45
Speed in nanoseconds
SA LA
Standard Power Low Power
3090 drw 10a
*Standard power only.
8
IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Datasheet Document History
11/22/99 Pg. 8 Pg. 1, 2, 3, 5, 6, 8 Pg. 1, 2, 8 Updated to new format Added Datasheet Document History Added Industrial Temperature range offerings Revised package offerings Not recommended for new designs Removed "Not recommended for new designs"
01/07/00 08/09/00 02/01/01
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-6116 fax:408-492-8674 www.idt.com
6.42 9
for Tech Support: sramhelp@idt.com 800 544-7726, x4033
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